System, method and storage medium for providing a high speed test interface to a memory subsystem

ABSTRACT

A buffer device for testing a memory subsystem. The buffer device includes a parallel bus port adapted for connection to a slow speed bus and a serial bus port adapted for connection to a high speed bus. The high speed bus operates at a faster speed than the slow speed bus. The buffer device also includes a bus converter having a standard operating mode for converting serial packetized input data received via the serial bus port into parallel bus output data for output via the parallel bus port. The buffer device also includes an alternate operating mode for converting parallel bus input data received via the parallel bus port into serial packetized output data for output via the serial bus port. The serial packetized input data is consistent in function and timing to the serial packetized output data.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation application of U.S. Ser. No.10/977,790, filed Oct. 29, 2004, the contents of which are incorporatedby reference herein in their entirety.

BACKGROUND OF THE INVENTION

The invention relates to testing a memory subsystem and in particular,to providing a high speed test interface to a memory subsystem.

Computer memory subsystems have evolved over the years, but continue toretain many consistent attributes. Computer memory subsystems from theearly 1980's, such as the one disclosed in U.S. Pat. No. 4,475,194 toLaVallee et al., of common assignment herewith, included a memorycontroller, a memory assembly (contemporarily called a basic storagemodule (BSM) by the inventors) with array devices, buffers, terminatorsand ancillary timing and control functions, as well as severalpoint-to-point busses to permit each memory assembly to communicate withthe memory controller via its own point-to-point address and data bus.FIG. 1 depicts an example of this early 1980 computer memory subsystemwith two BSMs, a memory controller, a maintenance console, andpoint-to-point address and data busses connecting the BSMs and thememory controller.

FIG. 2, from U.S. Pat. No. 5,513,135 to Dell et al., of commonassignment herewith, depicts an early synchronous memory module, whichincludes synchronous dynamic random access memories (DRAMs) 8, bufferdevices 12, an optimized pinout, an interconnect and a capacitivedecoupling method to facilitate operation. The patent also describes theuse of clock re-drive on the module, using such devices as phase lockloops (PLLs).

FIG. 3, from U.S. Pat. No. 6,510,100 to Grundon et al., of commonassignment herewith, depicts a simplified diagram and description of amemory system 10 that includes up to four registered dual inline memorymodules (DIMMs) 40 on a traditional multi-drop stub bus channel. Thesubsystem includes a memory controller 20, an external clock buffer 30,registered DIMMs 40, an address bus 50, a control bus 60 and a data bus70 with terminators 95 on the address bus 50 and data bus 70.

FIG. 4 depicts a 1990's memory subsystem which evolved from thestructure in FIG. 1 and includes a memory controller 402, one or morehigh speed point-to-point channels 404, each connected to a bus-to-busconverter chip 406, and each having a synchronous memory interface 408that enables connection to one or more registered DIMMs 410. In thisimplementation, the high speed, point-to-point channel 404 operated attwice the DRAM data rate, allowing the bus-to-bus converter chip 406 tooperate one or two registered DIMM memory channels at the full DRAM datarate. Each registered DIMM included a PLL, registers, DRAMs, anelectrically erasable programmable read-only memory (EEPROM) andterminators, in addition to other passive components.

As shown in FIG. 5, memory subsystems were often constructed with amemory controller connected either to a single memory module, or to twoor more memory modules interconnected on a ‘stub’ bus. FIG. 5 is asimplified example of a multi-drop stub bus memory structure, similar tothe one shown in FIG. 3. This structure offers a reasonable tradeoffbetween cost, performance, reliability and upgrade capability, but hasinherent limits on the number of modules that may be attached to thestub bus. The limit on the number of modules that may be attached to thestub bus is directly related to the data rate of the informationtransferred over the bus. As data rates increase, the number and lengthof the stubs must be reduced to ensure robust memory operation.Increasing the speed of the bus generally results in a reduction inmodules on the bus, with the optimal electrical interface being one inwhich a single module is directly connected to a single controller, or apoint-to-point interface with few, if any, stubs that will result inreflections and impedance discontinuities. As most memory modules aresixty-four or seventy-two bits in data width, this structure alsorequires a large number of pins to transfer address, command, and data.One hundred and twenty pins are identified in FIG. 5 as being arepresentative pincount.

FIG. 6, from U.S. Pat. No. 4,723,120 to Petty, of common assignmentherewith, is related to the application of a daisy chain structure in amultipoint communication structure that would otherwise require multipleports, each connected via point-to-point interfaces to separate devices.By adopting a daisy chain structure, the controlling station can beproduced with fewer ports (or channels), and each device on the channelcan utilize standard upstream and downstream protocols, independent oftheir location in the daisy chain structure.

FIG. 7 represents a daisy chained memory bus, implemented consistentwith the teachings in U.S. Pat. No. 4,723,120. A memory controller 111is connected to a memory bus 315, which further connects to a module 310a. The information on bus 315 is re-driven by the buffer on module 310 ato a next module, 310 b, which further re-drives the bus 315 to modulepositions denoted as 310 n. Each module 310 a includes a DRAM 311 a anda buffer 320 a. The bus 315 may be described as having a daisy chainstructure with each bus being point-to-point in nature.

As the density and speed of memory subsystems increases, it becomes moredifficult to test memory subsystems with standard test devices. Ingeneral, there is a lack of low cost industry test capability for veryhigh speed memory assemblies. Existing mainstream memory device andmodule testers are capable of operating at data rates of about 200 to500 megabytes per second (Mb/s) with extensions to 1 gigabyte per second(Gb/s) per pin possible on some test systems, and often at a very highcost. Although higher speed testers are expected in the future, they arenot expected to keep pace with rapid performance improvements on futurememory modules.

Other known testing solutions include using a built in self test (BIST)mode and/or using a transparent mode. BIST is a pre-programmed orprogrammable sequence and pattern generator, in conjunction with anerror checking capability. BIST is implemented in many new designs, butit is limited in test coverage and flexibility due to the die size andpower. The programmability is limited due to logic complexity. Inaddition, timing and voltage adjustments are also limited. Therefore,while BIST is often used for testing memory subsystems, it is oftensupplemented with other testing methods for thorough test coverage.Transparent mode refers to the capability of having the automated testequipment (ATE) provide address, command, clocks and data at aconventional speed (e.g., 400 Mb/s data) and the memory module passingthe information, unmodified and unchecked, to the DRAMs located on thememory module. The use of the transparent mode for testing does notresult in testing the memory subsystem at full operating speed.

Based on the lack of available high speed testers and the limitedcapability of known test features (e.g., BIST, transparent mode), analternate method of testing that can be utilized to test high speeddevices at a relatively low cost would be useful.

BRIEF SUMMARY OF THE INVENTION

Exemplary embodiments of the present invention include a buffer devicefor testing a memory subsystem. The buffer device includes a parallelbus port adapted for connection to a slow speed bus and a serial busport adapted for connection to a high speed bus. The high speed busoperates at a faster speed than the slow speed bus. The buffer devicealso includes a bus converter having a standard operating mode forconverting serial packetized input data received via the serial bus portinto parallel bus output data for output via the parallel bus port. Thebuffer device also includes an alternate operating mode for convertingparallel bus input data received via the parallel bus port into serialpacketized output data for output via the serial bus port. The serialpacketized input data is consistent in function and timing to the serialpacketized output data.

Additional exemplary embodiments include a method for testing apacketized cascade memory subsystem. The method includes receiving testdata at a bus converter. The test data is in a parallel bus data formatand received via a slow speed bus. The test data is converted into aserial packetized data format, resulting in converted test data. Theconverted test data transmitted to the memory subsystem via a high speedbus. The high speed bus operates at a faster speed than the slow speedbus.

Still further exemplary embodiments of the present invention include astorage medium encoded with machine-readable computer program code fortesting a packetized cascade memory subsystem, the storage mediumincluding instructions for causing a computer to implement a method. Themethod includes receiving test data at a bus converter. The test data isin a parallel bus data format and received via a slow speed bus. Thetest data is converted into a serial packetized data format, resultingin converted test data. The converted test data transmitted to thememory subsystem via a high speed bus. The high speed bus operates at afaster speed than the slow speed bus.

BRIEF DESCRIPTION OF THE DRAWINGS

Referring now to the drawings wherein like elements are numbered alikein the several FIGURES:

FIG. 1 depicts a prior art memory controller connected to two bufferedmemory assemblies via separate point-to-point links;

FIG. 2 depicts a prior art synchronous memory module with a bufferdevice;

FIG. 3 depicts a prior art memory subsystem using registered DIMMs;

FIG. 4 depicts a prior art memory subsystem with point-to-pointchannels, registered DIMMs, and a 2:1 bus speed multiplier;

FIG. 5 depicts a prior art memory structure that utilizes a multidropmemory ‘stub’ bus;

FIG. 6 depicts a prior art daisy chain structure in a multipointcommination structure that would otherwise require multiple ports;

FIG. 7 depicts a prior art daisy chain connection between a memorycontroller and memory modules;

FIG. 8 depicts a cascaded memory structure that is utilized by exemplaryembodiments of the present invention;

FIG. 9 depicts a memory structure with cascaded memory modules andunidirectional busses that is utilized by exemplary embodiments of thepresent invention;

FIG. 10 depicts a buffered memory module that is utilized by exemplaryembodiments of the present invention;

FIG. 11 depicts a buffered module wiring system that is utilized byexemplary embodiments of the present invention;

FIG. 12 depicts bus and DRAM timing diagrams showing the four to one busspeed multiplier that is utilized by exemplary embodiments of thepresent invention;

FIG. 13 depicts a downstream frame format that is utilized by exemplaryembodiments of the present invention;

FIG. 14 depicts a buffer device being utilized to convert slow speedsignals from an automated test equipment device into packetized highspeed signals for testing a memory subsystem in accordance withexemplary embodiments of the present invention;

FIG. 15 depicts buffer devices being utilized to convert slow speedsignals from an automated test equipment device into packetized highspeed signals and back into slow speed signals for input into theautomated test equipment device in accordance with exemplary embodimentsof the present invention;

FIG. 16 is a block diagram of a board-mounted buffer device that may betested by exemplary embodiments of the present invention; and

FIG. 17 depicts buffer devices being utilized to test unbuffered memorymodules in accordance with exemplary embodiments of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Exemplary embodiments of the present invention utilize the same bufferdevices contained in a packetized cascade memory subsystem for testingthe packetized cascade memory subsystem. When used in the packetizedcascade memory subsystem in a standard operating mode, a bus converterwithin the buffer device receives serial packetized data (i.e., in aserial bus packetized data input format) from a high speed bus (e.g.,1.6 Gb/s and 3.2 Gb/s) and converts the data into parallel bus data(i.e., in a parallel bus memory data output format) at a slower speed(e.g., 400 Mb/s and 800 Mb/s) for communicating with memory devices(e.g., SDRAMs and DDR2s). The high speed bus implements a packetizedmulti-transfer interface. When used in an alternate operating mode fortesting, the bus converter within the buffer device converts slowerspeed parallel bus data (i.e., in a parallel bus memory data inputformat) received from testing equipment into serial packetized data(i.e., in a serial bus packetized data output format) for transmissionon a high speed bus. The serial packetized data is used as input fortesting the memory subsystem via the high speed bus. In this manner,test data may be created by standard testing equipment and converted bythe buffer device for use in testing a packetized cascade memorysubsystem that includes the buffer device and a high speed bus.

Exemplary embodiments of the present invention provide a high speed testinterface to a memory subsystem, such as the one depicted in FIG. 8.FIG. 8 includes a cascaded memory structure that may be tested using ahigh speed test interface in accordance with exemplary embodiments ofthe present invention. It includes buffered memory modules 806 (e.g.,the buffer device is included within the memory module 806) that are incommunication with a memory controller 802. This memory structureincludes the memory controller 802 in communication with one or morememory modules 806 via a high speed point-to-point bus 804. Each bus 804in the exemplary embodiment depicted in FIG. 8 includes approximatelyfifty high speed wires for the transfer of address, command, data andclocks. By using point-to-point busses as described in theaforementioned prior art, it is possible to optimize the bus design topermit significantly increased data rates, as well as to reduce the buspincount by transferring data over multiple cycles. Whereas FIG. 4depicts a memory subsystem with a two to one ratio between the data rateon any one of the busses connecting the memory controller to one of thebus converters (e.g., to 1,066 Mb/s per pin) versus any one of thebusses between the bus converter and one or more memory modules (e.g.,to 533 Mb/s per pin), an exemplary embodiment of the present invention,as depicted in FIG. 8, provides a four to one bus speed ratio tomaximize bus efficiency and to minimize pincount.

Although point-to-point interconnects permit higher data rates, overallmemory subsystem efficiency must be achieved by maintaining a reasonablenumber of memory modules 806 and memory devices per channel(historically four memory modules with four to thirty-six chips permemory module, but as high as eight memory modules per channel and asfew as one memory module per channel). Using a point-to-point busnecessitates a bus re-drive function on each memory module, to permitmemory modules to be cascaded such that each memory module isinterconnected to other memory modules, as well as to the memorycontroller 802.

FIG. 9 depicts a memory structure with cascaded memory modules andunidirectional busses that may be tested by exemplary embodiments of thepresent invention. One of the functions provided by the memory modules806 in the cascade structure is a re-drive function to send signals onthe memory bus to other memory modules 806 or to the memory controller802. FIG. 9 includes the memory controller 802 and four memory modules806 a, 806 b, 806 c and 806 d, on each of two memory busses (adownstream memory bus 904 and an upstream memory bus 902), connected tothe memory controller 802 in either a direct or cascaded manner. Memorymodule 806 a is connected to the memory controller 802 in a directmanner. Memory modules 806 b, 806 c and 806 d are connected to thememory controller 802 in a cascaded manner.

An exemplary memory structure includes two unidirectional busses betweenthe memory controller 802 and memory module 806 a (“DIMM #1”) as well asbetween each successive memory module 806 b-d (“DIMM #2”, “DIMM #3” and“DIMM #4”) in the cascaded memory structure. The downstream memory bus904 is comprised of twenty-two single-ended signals and a differentialclock pair. The downstream memory bus 904 is used to transfer address,control, write data and bus-level error code correction (ECC) bitsdownstream from the memory controller 802, over several clock cycles, toone or more of the memory modules 806 installed on the cascaded memorychannel. The upstream memory bus 902 is comprised of twenty-threesingle-ended signals and a differential clock pair, and is used totransfer read data and bus-level ECC bits upstream from the sourcingmemory module 806 to the memory controller 802. Using this memorystructure, and a four to one data rate multiplier between the DRAM datarate (e.g., slow speed or 400 to 800 Mb/s per pin) and theunidirectional memory bus data rate (e.g., high speed or 1.6 to 3.2 Gb/sper pin), the memory controller 802 signal pincount, per memory channel,is reduced from approximately one hundred and twenty pins to about fiftypins.

FIG. 10 depicts a front view 1006 and a back view 1008 of the bufferedmemory module 806 that may be tested by exemplary embodiments of thepresent invention. In exemplary embodiments of the present invention,each memory module 806 includes a blank card having dimensions ofapproximately six inches long by one and a half inches tall, eighteenDRAM positions, a buffer device 1002, and numerous small components asknown in the art that are not shown (e.g., capacitors, resistors,EEPROM.) In an exemplary embodiment of the present invention, thedimension of the card is 151.35 mm long by 30.5 mm tall. In an exemplaryembodiment of the present invention, the buffer device 1002 is locatedin the center region of the front side of the memory module 806, asdepicted in the front view 1006 in FIG. 10. Memory devices 1004 (e.g.synchronous DRAMS (SDRAMS)) are located on either side of the bufferdevice 1002, as well as on the backside of the memory module 806, asdepicted in the back view 1008 in FIG. 10. The configuration may beutilized to facilitate high speed wiring to the buffer device 1002, aswell as signals from the buffer device to the memory devices 1004.

FIG. 11 depicts a buffered module wiring system that may be tested byutilizing exemplary embodiments of the present invention. In addition,the buffer device 1002 depicted in FIG. 11, running in an alternateoperating mode, is utilized as an interface between a testing device andthe memory module 806 to perform testing on the memory module 806 inexemplary embodiments of the present invention. FIG. 11 is a pictorialrepresentation of a memory module, with arrows representing the primarysignal flows into and out of the buffer device 1002 during the standardoperating mode. The signal flows include the upstream memory bus 902,the downstream memory bus 904, memory device address and command busses1102 and 1106, and memory device data busses 1108 and 1104. In anexemplary embodiment of the present invention, the buffer device 1002,also referred to as a memory interface chip, provides two copies of theaddress and command signals to the memory devices 1004 with the rightmemory device address and command bus 1106 exiting from the right sideof the buffer device 1002 for the memory devices 1004 located to theright side and behind the buffer device 1002 on the right. A busconverter within the buffer device 1002 converts the high speed memorybus data into slower speed address and command signals for communicationwith the memory devices 1004. The left memory device address and commandbus 1102 exits from the left side of the buffer device 1002 and connectsto the memory devices 1004 to the left side and behind the buffer device1002 on the left. Similarly, the data bits intended for memory devices1004 to the right of the buffer device 1002 exit from the right of thebuffer device 1002 on the right memory device data bus 1108. The databits intended for the left side of the buffer device 1002 exit from theleft of the buffer device 1002 on the left memory device data bus 1104.The high speed upstream memory bus 902 and downstream memory bus 904exit from the lower portion of the buffer device 1002, and connect to amemory controller or other memory modules either upstream or downstreamof this memory module 806, depending on the application. The bufferdevice 1002 receives signals that are four times the memory module datarate and converts them into signals at the memory module data rate.

The memory controller 802 interfaces to the memory modules 806 via apair of high speed busses (or channels). The downstream memory bus 904(outbound from the memory controller 802) interface has twenty-four pinsand the upstream memory bus 902 (inbound to the memory controller 802)interface has twenty-five pins. The high speed channels each include aclock pair (differential), a spare bit lane, ECC syndrome bits and theremainder of the bits pass information (based on the operationunderway). Due to the cascaded memory structure, all nets arepoint-to-point, allowing reliable high-speed communication that isindependent of the number of memory modules 806 installed. Whenever amemory module 806 receives a packet on either bus, it re-synchronizesthe command to the internal clock and re-drives the command to the nextmemory module 806 in the chain (if one exists).

FIG. 12 depicts bus and SDRAM timing diagrams showing the four to onebus speed multiplier that are utilized by exemplary embodiments of thepresent invention. As described previously, when being utilized by apacketized cascade memory subsystem, in the standard mode, a busconverter within the buffer device 1002 converts high speed serialpacketized data into slower speed parallel data. When being utilized totest a packetized cascade memory subsystem, in the alternate mode, thebus converter within the buffer device 1002 does the opposite; itconverts slower speed parallel data into high speed serial packetizeddata for use as test data. FIG. 12 is a simplified “write” timingdiagram that demonstrates the bus timing relationships for a write cyclein the preferred embodiment. The same approach may be taken for othercycles, such as a read cycle. A high speed bus clock (hsb_clk) 1202 isthe notation for the positive side of the differential clock thattravels with the high speed data traveling downstream from the memorycontroller 802 to the first memory module 806, or DIMM. Even though thehsb_clk 1202 is shown as being single-ended, in exemplary embodiments ofthe present invention, a differential clock is utilized to reduce clocksensitivity to external noise and coupling. A high speed data signal(hsb_data) 1204 shows a burst of eight transfers, operating at a doubledata rate speed (i.e., data is valid on both edges of the clock), whichin this example constitutes a single frame of address, command and datato the first memory module 806 position.

With the aforementioned downstream bus width of twenty-two bits, and theburst of eight, a full frame can constitute up to one hundred andseventy-six unique bits, depending on the assignment or use of thesebits and the actual wires on the bus. This width is more than adequateto provide the approximately one hundred and twenty memory signalsdefined as being required by the memory module in FIG. 5, therebyenabling additional information to be included in the frame to furtherenhance overall system reliability, fault survivability and/orperformance.

Also as shown in FIG. 12, the eight bits occur over four of the hsb_clkcycle times at which point this example shows no further activity on thehigh speed bus. A local memory clock (m_clk) 1208 on the memory module806 is derived from the hsb_clk 1202, and is shown as a single-endedsignal m_clk (0:5) operating at one quarter the frequency of the hsb_clk(1202. Although shown as a single-ended clock, in an exemplaryembodiment of the present invention, the m_clk 1208 would also operateas a differential clock. The decoded memory command signifying a ‘write’operation to double data rate (DDR2) memory devices, or memory devices1004 on the memory module 806, is shown on the signal labeled m_cmd1206. This command is decoded from the high speed bus and is driven bythe buffer to the DDR2 DRAMS 1004 to ensure arrival at the memorydevices 1004 prior to the rising edge of the clock at the memory devices1004.

The seventy-two bits of data written to the DDR2 memory devices 1004 areshown as m_dq(0:71) 1210, and are shown arriving at the memory devices1004 one full memory clock after the write command is decoded, as a DDRsignal relative to the m_clk 1208. In an exemplary embodiment of thepresent invention, the data, or m_dq(0:71) 1210 is single ended. Thenine DDR data strobes (m_dqs_p) 1212 are also shown, as single endedsignals, switching one quarter of a clock cycle prior to the DDR2 SDRAMs1004, thereby ensuring that the strobe switches approximately in thecenter of each valid write data bit. In an exemplary embodiment of thepresent invention, the m_dqs_p 1212 is differential. This diagramdemonstrates a burst of four data bits to the memory devices 1004 (wd0through wd3) with seventy-two bits of memory data being provided to thememory devices every memory clock cycle. In this manner, the data rateof the slower memory modules 806 is matched to the high-speed memory busthat operates at four times the speed of the memory modules.

FIG. 13 depicts a downstream frame format that is utilized by exemplaryembodiments of the present invention to transfer information downstreamfrom the memory controller 802 to the memory modules 806. In anexemplary embodiment of the present invention, the downstream frameconsists of eight transfers with each transfer including twenty-twosignals and a differential clock (twenty-four wires total). The framefurther consists of eight command wires (c0 through c7) 1308, nine datawires (di0 through di8) 1306, four bus ECC (Error Correcting Code) wires(ecc0 through ecc3) 1304 and a spare wire (spare) 1302. The seventy-twodata bits referenced in the timing diagram of FIG. 12 are shown in FIG.13 as bits di0 through di8 and consist of nine wires with eighttransfers on each wire for each frame. The numbering of each data bit,as well as for other bits, is based on the wire used, as well as thespecific transfer. D34 refers to data bit 3 (of bits 0 through 8) andtransfer 4 (of transfer 0 through 7).

The command bit field is shown as c0 through c7 and consists ofsixty-four bits of information provided to the module over eighttransfers. The ECC bit field (ecc0 through ecc3) consists of thirty-twobit positions over eight transfers but is actually formatted in groupsof sixteen bits. Each sixteen bit packet consists of four transfers overeach of the four wires, and provides the bus level fault detection andcorrection across each group of 4 bus transfers. The spare bit positionmay be used to logically replace any of the twenty-one wires, alsodefined as bitlanes, used to transfer bits in the command, data and ECCfields, should a failure occur in one of those bitlanes that results inerrors that exceed a system-assigned failure threshold limit. Using thisexemplary embodiment of the present invention provides that out of theone hundred and seventy-six possible bit positions, one hundred andsixty-eight are available for the transfer of information to the memorymodule 806, and of those one hundred and sixty-eight bit positions,thirty-two bit positions are further assigned to providing ECCprotection on the bus transfers themselves, thereby allowing a total ofone hundred and thirty-six bit positions to be used for the transfer ofinformation to the memory module 806.

Exemplary embodiments of the present invention include the buffer device1002 described above including an alternate operating mode to be used intesting high speed cascaded memory subsystems, such as those describedabove, with a slow speed testing device. As described above, thestandard operating mode of the buffer device 1002 includes the receipt,ECC correction and bus conversion from a high speed (e.g., 1.6 Gb/s to3.2 Gb/s) serial packetized bus to a slower (e.g., 400 to 800 Mb/s)parallel DDR2 memory bus. The alternate operating mode includes havingthe parallel bus act as the “master” and initiating a bus conversionfrom the parallel bus to the serial packetized bus when placed in thesecond operating mode. In the second mode, address, command, clock anddata are received on the parallel bus and the buffer device 1002 outputsa properly formatted series of packetized frames which can be used tooperate a downstream buffered memory module 806.

FIG. 14 depicts the buffer device 1002 being utilized to convert slowspeed signals from an ATE device 1402 (i.e., a tester device) intopacketized high speed signals for testing a memory subsystem inaccordance with exemplary embodiments of the present invention. FIG. 14depicts the simplest mode of operation, where the buffer device 1002 isplaced on an ATE interface board 1406 directly connected to the ATEdevice 1402 memory interface. In this mode, control signals will beprovided to the buffer device 1002 on the control pins (e.g., chipselect “CS”, clock enable “CKE”, on die termination “ODT”, columnaddress strobe “CAS”, row address strobe “RAS”, and write enable “WE”).In addition, address information will be provided in conventionalRAS/CAS (two cycle transfer) sequence and data will be provided (forwrite cycles) in a conventional burst of four or eight (programmable)transfers. The bus converter device within the buffer device 1002 storesand formats the received information, then transmits the information asa high speed eight transfer frame to one or more downstream memorymodules 806. With the four to one operating frequency, by operating thememory tester at 533 Mb/s in exemplary embodiments of the presentinvention, the high speed link can be operated at 2.1 Gb/s.

In FIG. 14, a single memory module 806 is shown to the right of thebuffer device 1002 as the memory module 806 under test. In this example,only the upstream side of the memory module 806 is fully tested. Thememory module 806 can be fully tested, operating the memory devices 1004at speed, with and without forced errors. In exemplary embodiments ofthe present invention other tests may include retention time testing,temperature testing, voltage testing, and other traditional memory teststhat would not otherwise be possible without the parallel to serial busconverter functionality. In addition to traditional testing, the memorybuilt in self test (BIST) features can be fully utilized.

Also included in FIG. 14 are additional memory modules 806, connectedvia dotted lines to the first memory module 806, indicating thepossibility to test multiple memory modules 806 on the same channel.Although intensive real time testing may not be possible on all modulessimultaneously, using the BIST modes in conjunction with theconventional test modes, a high degree of parallelism can be obtained.

FIG. 15 depicts buffer devices 1002 being utilized to convert slow speedsignals from the ATE device 1402 into packetized high speed signals andback into slow speed signals for input into the ATE device 1402 inaccordance with exemplary embodiments of the present invention. FIG. 15depicts a test structure that is similar to the one depicted in FIG. 14with the addition of the buffer device 1002 beyond the last memorymodule 806 being tested and connected back to the ATE device 1402. Thisbuffer device 1002 can be used to receive signals sent downstream fromthe ATE device 1402 that have passed through the one or more memorymodules 806 under test. In addition, the buffer device 1002 can returnthese signals to the ATE device 1402 in the conventional parallelconfiguration and either identical in sequence and timings (delayed onlyby the transfer time downstream from the tester) to the initiallytransmitted information, or reconfigured, if desired to an alternateconfiguration. In addition, the ATE device 1402 can send information(typically data and ECC) upstream through the second buffer device 1002and the upstream memory modules 806 back to the ATE device 1402 toverify both the integrity of the channel, as well as the fullfunctionality of the final memory module 806 in the cascade channel(i.e., the re-drive and receive and data merge function on the highspeed channel).

In addition to using the standard and alternate operating modes in thebuffer device 1002 for testing, exemplary embodiments of the presentinvention allow an enhanced test capability where the buffer device 1002may be utilized in a stand alone fashion, upstream from the last memorymodule 806 under test. The buffer device 1002 can forward, on itsparallel bus, an exact copy of the information initially sent out by thetester, on the tester parallel bus, to the first parallel to serial busconverter device. The ATE tester device will then be able to compare theinformation sent out by the tester to the information received by thetester (a pre-defined number of clock counts later) and to determine ifany errors have occurred. This capability provides a means of performinglow cost bit error testing, of inducing bus errors, of verifying buserror detection, and of permitting full testing of the upstream memoryport on the memory module 806 under test at full speed.

In an exemplary embodiment of the present invention, commands and datathat have been sent out from the ATE device 1402 will be sent back tothe ATE device 1402 via the second buffer device 1002 to verify theintegrity of the memory subsystem. For example, a correctable error maybe injected and propagated from the ATE device 1402 to the first bufferdevice 1002 and converted from low speed to packetized high speed. Thedata with the error is then sent to the first memory module 806 on thedownstream memory bus 904. The error is then detected at the bufferdevice 1002 located on the first memory module 806 (e.g., a statuscondition is set to indicate an error has been detected) and the data isforwarded on to the second memory module 806. The second memory module806 also detects an error and logs a status. Eventually, the data withthe error arrives back at the second buffer device 1002 and is convertedfrom packetized high speed to low speed. The ATE device 1402 thenverifies the command that was originally sent out to the first bufferdevice 1002.

FIG. 16 is a block diagram of a board-mounted multi-mode buffer device1002 that may be tested by exemplary embodiments of the presentinvention. FIG. 16 demonstrates the use of the multi-mode buffer device1002 (the same one discussed previously with regard to buffered memorymodules 806) as a board-mounted bus-to-bus converter chip, attached toone or two unbuffered or registered DIMM memory modules 806. Themulti-mode buffer device 1002 includes a selection means to adapt thebuffer device 1002 for direct attachment to a memory module 806 toenable a buffered memory module mode of operation or to adapt the bufferdevice 1002 for connection to at least one of an unbuffered memorymodule and a registered memory module to enable a bus converter mode ofoperation. The selection means may be implemented in hardware and/orsoftware. In addition a cascade bus 1606 is available from the buffer(or exists on the buffer) and can be connected to a buffered DIMM memorymodule 806 or via another multi-mode buffer device 1002, to socketsintended for either a second one or two unbuffered or registered DIMMmemory modules 806. In this example, the memory a (ma) outputs 1604 areconnected to the first DIMM position and the memory b (mb) outputs 1608are connected to the second DIMM position, and one or both DIMMpositions may be populated based on the application requirements. Inaddition, the memory data (md) 1610 is connected to both memory modules806 in FIG. 16, generally as a conventional multi-drop net. An upstreamreceiver functional block and a downstream driver functional block arecontained in a driver/receiver functional block 1602 within the memorycontroller 802. An upstream receiver functional block, an upstreamdriver functional block, a downstream driver functional block and adownstream receiver functional block are included in the multi-modebuffer device 1002. The upstream memory bus 902 and the downstreammemory bus 904 are utilized to transfer data, commands, address andclock data between the memory controller 802 and the multi-mode bufferdevice 1002.

FIG. 17 depicts buffer devices being utilized to test the board mountedmulti-mode buffer device 1002 depicted in FIG. 16, or alternatively,non-board mounted buffer devices 1002 in accordance with exemplaryembodiments of the present invention. In addition to the manufacturingoriented test modes described above, exemplary embodiments of thepresent invention may be utilized to facilitate early designverification of both buffered memory modules 806 and buffer devices 1002when used to test unbuffered and/or registered memory modules.

By implementing the logic associated with standard and alternateoperating modes of the buffer device 1002 described herein, it ispossible to utilize existing ATE devices to fully test memory modules806, at speed and at a low cost. This capability further reduces theadded cost of having a different high speed interface because the bufferdevices 1002 with high speed interfaces can be utilized for their owntesting. In addition, exemplary embodiments of the present invention maybe utilized for testing the cascaded memory subsystems described herein.The operating mode may be selected via software and/or hardware andmemory modules may be shipped with both operating modes or with thealternate operating mode disabled. The alternate operating mode would beenabled for users who perform tests on the memory modules.

As described above, the embodiments of the invention may be embodied inthe form of computer-implemented processes and apparatuses forpracticing those processes. Embodiments of the invention may also beembodied in the form of computer program code containing instructionsembodied in tangible media, such as floppy diskettes, CD-ROMs, harddrives, or any other computer-readable storage medium, wherein, when thecomputer program code is loaded into and executed by a computer, thecomputer becomes an apparatus for practicing the invention. The presentinvention can also be embodied in the form of computer program code, forexample, whether stored in a storage medium, loaded into and/or executedby a computer, or transmitted over some transmission medium, such asover electrical wiring or cabling, through fiber optics, or viaelectromagnetic radiation, wherein, when the computer program code isloaded into and executed by a computer, the computer becomes anapparatus for practicing the invention. When implemented on ageneral-purpose microprocessor, the computer program code segmentsconfigure the microprocessor to create specific logic circuits.

While the invention has been described with reference to exemplaryembodiments, it will be understood by those skilled in the art thatvarious changes may be made and equivalents may be substituted forelements thereof without departing from the scope of the invention. Inaddition, many modifications may be made to adapt a particular situationor material to the teachings of the invention without departing from theessential scope thereof. Therefore, it is intended that the inventionnot be limited to the particular embodiment disclosed as the best modecontemplated for carrying out this invention, but that the inventionwill include all embodiments falling within the scope of the appendedclaims. Moreover, the use of the terms first, second, etc. do not denoteany order or importance, but rather the terms first, second, etc. areused to distinguish one element from another.

1. A buffer device for testing a memory subsystem, the buffer devicecomprising: a parallel bus port adapted for connection to a slow speedbus; a serial bus port adapted for connection to a high speed bus,wherein the high speed bus operates at a faster speed than the slowspeed bus; and a bus converter having a standard operating mode forconverting serial packetized input data received via the serial bus portinto parallel bus output data for output via the parallel bus port andan alternate operating mode for converting parallel bus input datareceived via the parallel bus port into serial packetized output datafor output via the serial bus port, wherein the serial packetized inputdata is consistent in function and timing to the serial packetizedoutput data.
 2. The buffer device of claim 1 wherein the high speed busoperates at four times the speed of the slow speed bus.
 3. The bufferdevice of claim 1 wherein the slow speed bus operates at a dynamicrandom access memory (DRAM) data rate.
 4. The buffer device of claim 1wherein the serial packetized output data output via the serial bus portemulates a high speed bus.
 5. The buffer device of claim 1 wherein theserial packetized output data for output via the serial bus portemulates a high speed interface for communicating to a buffered memorymodule.
 6. A system comprising: a buffer device comprising: a parallelbus port adapted for connection to a slow speed bus; a serial bus portadapted for connection to a high speed bus, wherein the high speed busoperates at a faster speed than the slow speed bus; and a bus converterhaving a standard operating mode for converting serial packetized inputdata received via the serial bus port into parallel bus output data foroutput via the parallel bus port and an alternate operating mode forconverting parallel bus input data received via the parallel bus portinto serial packetized output data for output via the serial bus port,wherein the serial packetized input data is consistent in function andtiming to the serial packetized output data; and a tester device adaptedfor connection to the slow speed bus and including instructions forcreating test data and for transmitting the test data as parallel businput test data to the parallel bus port via the slow speed bus.
 7. Thesystem of claim 6 wherein the tester device includes furtherinstructions for receiving test result data responsive to the test datafrom the buffer device, the receiving via the slow speed bus.
 8. Asystem comprising: a buffer device comprising: a parallel bus portadapted for connection to a slow speed bus; a serial bus port adaptedfor connection to a high speed bus, wherein the high speed bus operatesat a faster speed than the slow speed bus; and a bus converter having astandard operating mode for converting serial packetized input datareceived via the serial bus port into parallel bus output data foroutput via the parallel bus port and an alternate operating mode forconverting parallel bus input data received via the parallel bus portinto serial packetized output data for output via the serial bus port,wherein the serial packetized input data is consistent in function andtiming to the serial packetized output data; and a buffered memorymodule adapted for connection to the high speed bus and includinginstructions for receiving test data as serial packetized output testdata from the serial bus port via the high speed bus.
 9. The system ofclaim 8 wherein the buffered memory module includes further instructionsfor transmitting test result data responsive to the test data to theserial bus port via the high speed bus.
 10. The system of claim 8wherein the buffered memory module includes a memory device and a secondbus converter operating in the standard mode for receiving the test dataas serial packetized data and for converting the test data into parallelbus data for communication with the memory device.
 11. The system ofclaim 8 wherein the buffered memory module is adapted to be connected toa packetized cascade memory subsystem via a packetized multi-transferinterface.
 12. The system of claim 8 wherein the buffered memory moduleis adapted to be connected to one or more unbuffered memory modules andregistered memory modules.
 13. The system of claim 12 wherein thebuffered memory module and the one or more unbuffered memory modules andregistered memory modules are board mounted.
 14. A storage mediumencoded with machine-readable computer program code for testing apacketized cascade memory subsystem, the storage medium includinginstructions for causing a computer to implement a method comprising:receiving test data at a bus converter, the test data in a parallel busdata format and received via a slow speed bus; converting the test datainto a serial packetized data format resulting in converted test data;and transmitting the converted test data to the memory subsystem via ahigh speed bus, wherein the high speed bus operates at a faster speedthan the slow speed bus.
 15. The storage medium of claim 14 wherein thehigh speed bus operates at four times the speed of the slow speed bus.16. The storage medium of claim 14 wherein the test data is receivedfrom a tester device operating at the same speed as the slow speed bus.17. The storage medium of claim 14 wherein the high speed bus operatesat the same speed as the memory subsystem.
 18. The storage medium ofclaim 14 further comprising: receiving test result data from the memorysubsystem via the high speed bus, wherein the test result data isresponsive to the test data and is in the serial packetized data format;converting the test result data into the parallel bus data formatresulting in converted test result data; and transmitting the convertedtest result data to a tester device via the slow speed bus.
 19. Thestorage medium of claim 14 wherein the memory subsystem includes amemory device operating at the speed of the slow speed bus and an otherbus converter for receiving the converted test data and for convertingthe test data into the parallel bus data input format for communicationwith the memory device.